Geodesic
The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat
Nanosistemy: fizika, himiâ, matematika, Tome 6 (2015) no. 6, pp. 837-842 Cet article a éte moissonné depuis la source Math-Net.Ru

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In this work the dependence between the position of single charge trapped in an oxide layer or at SiO$_2$ – Si$_3$N$_4$ interface and the concentration distribution of charge carriers on a semiconductor substrate surface of the nanometer n-channel Metal-Nitride-Oxide-Semiconductor Field Effect Transistor (MNOSFET) and p-channel MNOSFET with n$^+$ drain area is studied. It is shown that the lateral capacitances of nanometer MNOSFET depend on the position of single charge in oxide or at interface. This dependence allows one to estimate the position of trapped charges along the channel of transistor.
Keywords: defects, lateral capacitances, oxide trapped charge, interface trapped charge, nanometer MNOSFET. 
@article{NANO_2015_6_6_a12,
     author = {A. E. Atamuratov and U. A. Aminov and Z. A. Atamuratova and M. Halillaev and A. Abdikarimov and H. R. Matyakubov},
     title = {The lateral capacitance of nanometer {MNOSFET} with a single charge trapped in oxide layeror at {SiO}$_2$ {\textendash} {Si}$_3${N}$_4$ interfaceat},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {837--842},
     year = {2015},
     volume = {6},
     number = {6},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2015_6_6_a12/}
}
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%A H. R. Matyakubov
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A. E. Atamuratov; U. A. Aminov; Z. A. Atamuratova; M. Halillaev; A. Abdikarimov; H. R. Matyakubov. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat. Nanosistemy: fizika, himiâ, matematika, Tome 6 (2015) no. 6, pp. 837-842. http://geodesic.mathdoc.fr/item/NANO_2015_6_6_a12/