GaAs thermal oxidation activated by the coaction of p-block oxides

I. Ya. Mittova ; V. F. Kostryukov

Nanosistemy: fizika, himiâ, matematika, Tome 5 (2014) no. 3, pp. 417-426

Résumé

This study summarizes the results for the investigation of the process of gallium arsenide thermal oxidation processes activated by the coaction of the oxides in Sb$_{2}$O$_{3}$+Bi$_{2}$O$_{3}$, Sb$_{2}$O$_{3}$+PbO and PbO+Bi$_{2}$O$_{3}$ binary compositions was studied. The analysis of the character and nature of nonlinear effect of various compositions of chemostimulators on the GaAs-supported oxide layer thickness grown on the GaAs surface was performed. It is shown that the actual oxide layer thickness is different from the additive value. The main patterns of the impact for binary compositions of p-element oxides of p-elements on thermal oxidation of gallium arsenide determined by physico-chemical nature of chemostimulators, the nature of their interaction and the method of administration in the system were described.

Détail

Keywords: semiconductors, gallium arsenide, thin films, thermal oxidation, nonlinear effects.