Geodesic
Electrical properties of hot wall deposited PbTe–SnTe thin films
Nanosistemy: fizika, himiâ, matematika, Tome 4 (2013) no. 6, pp. 816-822 Cet article a éte moissonné depuis la source Math-Net.Ru

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Polycrystalline Pb$_{1-x}$Sn$_{x}$Te ($0.0\le x\le 1.0$) telluride alloys were synthesized by the direct fusion technique. Thin films of these materials were prepared by a hot wall deposition method on glass substrates at T$_{sub}$ =230–330$^\circ$ C and in a vacuum of about 10$^{-5}$ Torr. The microstructure of the films was characterized by XRD, SEM, EDX and AES. The films showed a natural cubic structure. The thin films' microstructure consisted of densely packed grains with dimensions of 50–300 nm and crystallite growth direction is perpendicular to substrate plane. The asgrown Pb$_{1-x}$Sn$_{x}$Te films showed p-type conductivity. Thermoelectric measurements of the films showed high values for the room-temperature Seebeck coefficient ranging, from 20 to 400 $\mu$V $\cdot$ K$^{-1}$, for SnTe to PbTe thin films, respectively. The conductivity of the films was in the range of 3 $\cdot$ 10$^{1}$–1 $\cdot$ 10$^{4}$ $\Omega^{-1}\cdot$ cm$^{-1}$.
Keywords: hot wall deposition, electrical properties, thin films. 
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     author = {V. A. Ivanov and V. F. Gremenok and H. G. Seidi and S. P. Zimin and E. S. Gorlachev},
     title = {Electrical properties of hot wall deposited {PbTe{\textendash}SnTe} thin films},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {816--822},
     year = {2013},
     volume = {4},
     number = {6},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2013_4_6_a8/}
}
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V. A. Ivanov; V. F. Gremenok; H. G. Seidi; S. P. Zimin; E. S. Gorlachev. Electrical properties of hot wall deposited PbTe–SnTe thin films. Nanosistemy: fizika, himiâ, matematika, Tome 4 (2013) no. 6, pp. 816-822. http://geodesic.mathdoc.fr/item/NANO_2013_4_6_a8/