Geodesic
Investigation of the electron-phonon interaction in structures InAs/AlSb in quantization magnetic fields regime
Nanosistemy: fizika, himiâ, matematika, Tome 3 (2012) no. 6, pp. 36-46 Cet article a éte moissonné depuis la source Math-Net.Ru

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Study of transverse magnetoresistance oscillations $\rho_{xx}$(B) were performed for InAs/AlSb samples with different doping level at temperatures T = (4$\div$28) K. Based on test of magnetic field dependence amplitude $\rho_{xx}$ (B) the formation dynamic of Landau quantization destruction was established. The components of the electron-electron and the electron-phonon interactions were marked out and the relaxation time $\tau_{q}$ ($\tau_{ee}$, $\tau_{e-ph}$) was evaluated. On the base of physical model of electron interaction the role of electron-phonon relaxation was revealed as a factor, which stabilizes the process of Landau quantization destruction. Experimental nonlinear dependence $\tau_{q}$ (T) is explained by electron scattering by piezoelectric and deformation potential of acoustic phonons and channels competition inter-(intra-) subband scattering. Parametric dependence of quantum relaxation time from the magnetic field $\tau_{q}$ $\varpropto$ B$^{-0.6}$ was established.
Keywords: 2D electron gas, relaxation time, magnetoresistance.
Mots-clés : electron-phonon interaction 
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     author = {M. M. Afanasova and V. A. Stepanov and M. A. Korzhavchikov},
     title = {Investigation of the electron-phonon interaction in structures {InAs/AlSb} in quantization magnetic fields regime},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {36--46},
     year = {2012},
     volume = {3},
     number = {6},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/NANO_2012_3_6_a3/}
}
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M. M. Afanasova; V. A. Stepanov; M. A. Korzhavchikov. Investigation of the electron-phonon interaction in structures InAs/AlSb in quantization magnetic fields regime. Nanosistemy: fizika, himiâ, matematika, Tome 3 (2012) no. 6, pp. 36-46. http://geodesic.mathdoc.fr/item/NANO_2012_3_6_a3/