Geodesic
The catalytic action of vanadium and its oxide (V) in the oxidation processes of A$^{\mathrm{III}}$ B$^{\mathrm{V}}$ semiconductors
Nanosistemy: fizika, himiâ, matematika, Tome 3 (2012) no. 2, pp. 116-138 Cet article a éte moissonné depuis la source Math-Net.Ru

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The catalytic synchronous mechanism effect of deposited nanoscale layers of chemostimulaters V and V$_2$O$_5$ on the surface of InP and GaAs in the process of thermal oxidation these semiconductors was established. The proof of this mechanism is a abrupt decline in the effective activation energy of processes, a significant increase in the rate of film growth compared with its own oxidation, regeneration of active particles containing V$^{+5}$ (data of XRD, IRS, AES), the independence of the kinetic parameters of oxidation processes on the amount of applied catalyst. Thermal oxidation of InP in the presence of nanoislands of V$_2$O$_5$ in the initial stage of the process occurs mainly in those catalytically active centers (accordingly to the data of SEM, AES).
Keywords: heterostructure, chemical stimulated oxidation, catalysis, gallium arsenide
Mots-clés : transit, indium phosphide. 
@article{NANO_2012_3_2_a10,
     author = {I. Ya. Mittova and E. V. Tomina and A. A. Lapenko and B. V. Sladkopevtsev},
     title = {The catalytic action of vanadium and its oxide {(V)} in the oxidation processes of {A}$^{\mathrm{III}}$ {B}$^{\mathrm{V}}$ semiconductors},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {116--138},
     year = {2012},
     volume = {3},
     number = {2},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/NANO_2012_3_2_a10/}
}
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I. Ya. Mittova; E. V. Tomina; A. A. Lapenko; B. V. Sladkopevtsev. The catalytic action of vanadium and its oxide (V) in the oxidation processes of A$^{\mathrm{III}}$ B$^{\mathrm{V}}$ semiconductors. Nanosistemy: fizika, himiâ, matematika, Tome 3 (2012) no. 2, pp. 116-138. http://geodesic.mathdoc.fr/item/NANO_2012_3_2_a10/