Geodesic
Analytic-numerial method for computation of interaction of physical fields in semiconductor diode
Matematičeskoe modelirovanie, Tome 27 (2015) no. 7, pp. 15-24

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The paper suggests an analytic-numerical method for solving a singularly perturbed nonlinear system of differential equations, which models interaction of physical fields in semiconductor diode. Interaction of electric field and densities of holes and electrons is considered in drift-diffusion approximation and recombination function is taken in the form, proposed by Shockley, Read and Hall. The method was realized and wide numerical experiments approved superexponential convergence rate of the method.
Keywords: modeling of physical fields in semiconductor devices, singularly perturbed systems, analytic-numerical methods, functional Newton’s method, WKB approximation. 
@article{MM_2015_27_7_a3,
     author = {S. I. Bezrodnykh and V. I. Vlasov},
     title = {Analytic-numerial method for computation of interaction of physical fields in semiconductor diode},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {15--24},
     publisher = {mathdoc},
     volume = {27},
     number = {7},
     year = {2015},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_2015_27_7_a3/}
}
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S. I. Bezrodnykh; V. I. Vlasov. Analytic-numerial method for computation of interaction of physical fields in semiconductor diode. Matematičeskoe modelirovanie, Tome 27 (2015) no. 7, pp. 15-24. http://geodesic.mathdoc.fr/item/MM_2015_27_7_a3/