Geodesic
On self-organization processes of nanostructures on semiconductor surface by ion bombardment
Matematičeskoe modelirovanie, Tome 24 (2012) no. 12, pp. 23-28

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The nanostructures self-organization process on semiconductor surfaces are considered. The mathematical model is formulated and numerical modeling of this process is carried out. The influence of high order terms on the evolution of surface morphology is studied. The defects of the surface morphology after oblique ion bombardment are classified.
Keywords: ion bombardment, dissipation, self-organization, substrate.
Mots-clés : nanostructure 
@article{MM_2012_24_12_a3,
     author = {N. A. Kudryashov and P. N. Ryabov and T. E. Fedyanin},
     title = {On self-organization processes of nanostructures on semiconductor surface by ion bombardment},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {23--28},
     publisher = {mathdoc},
     volume = {24},
     number = {12},
     year = {2012},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_2012_24_12_a3/}
}
TY  - JOUR
AU  - N. A. Kudryashov
AU  - P. N. Ryabov
AU  - T. E. Fedyanin
TI  - On self-organization processes of nanostructures on semiconductor surface by ion bombardment
JO  - Matematičeskoe modelirovanie
PY  - 2012
SP  - 23
EP  - 28
VL  - 24
IS  - 12
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/MM_2012_24_12_a3/
LA  - ru
ID  - MM_2012_24_12_a3
ER  - 
%0 Journal Article
%A N. A. Kudryashov
%A P. N. Ryabov
%A T. E. Fedyanin
%T On self-organization processes of nanostructures on semiconductor surface by ion bombardment
%J Matematičeskoe modelirovanie
%D 2012
%P 23-28
%V 24
%N 12
%I mathdoc
%U http://geodesic.mathdoc.fr/item/MM_2012_24_12_a3/
%G ru
%F MM_2012_24_12_a3
N. A. Kudryashov; P. N. Ryabov; T. E. Fedyanin. On self-organization processes of nanostructures on semiconductor surface by ion bombardment. Matematičeskoe modelirovanie, Tome 24 (2012) no. 12, pp. 23-28. http://geodesic.mathdoc.fr/item/MM_2012_24_12_a3/