Geodesic
Mathematical model of thermo-electro-hydrodynamic convention in semiconductors in the presence of charge carriers collisions
Matematičeskoe modelirovanie, Tome 17 (2005) no. 2, pp. 109-118.

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From the Boltzmann?s kinetic equation and Maxwell?s equations the relations describing the transfer of charge carriers in semiconductors in hydrodynamic approximation are derived. The mathematical model of thermoelectrohydrodynamic convection in monopolar semiconductors in the presence of charge carriers collisions with lattice and a crystal impurities is built. The dependence of convective instability and Ray-ligh?s critical number from a relaxation time of momentum are investigated. 
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     author = {R. A. Brazwe and O. N. Kudelin},
     title = {Mathematical model of thermo-electro-hydrodynamic convention in semiconductors in the presence of charge carriers collisions},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {109--118},
     publisher = {mathdoc},
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     number = {2},
     year = {2005},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_2005_17_2_a10/}
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R. A. Brazwe; O. N. Kudelin. Mathematical model of thermo-electro-hydrodynamic convention in semiconductors in the presence of charge carriers collisions. Matematičeskoe modelirovanie, Tome 17 (2005) no. 2, pp. 109-118. http://geodesic.mathdoc.fr/item/MM_2005_17_2_a10/