Geodesic
Analysis of structures based on graded semiconductor compound
Matematičeskoe modelirovanie, Tome 10 (1998) no. 11, pp. 63-81 Cet article a éte moissonné depuis la source Math-Net.Ru

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A diffusion-drift model for diode structure based on graded III–V semiconductor compounds is considered. The model is developed under the assumption of an electrically neutral base region. An existence-uniqueness result in the classes of generalized functions is proved. In order to find numerical solution, the scheme of the method of lines is constructed and justified, an estimate of convergence rate is received. Analysis of the results of numerical experiment is presented. 
@article{MM_1998_10_11_a5,
     author = {I. P. Gavriljuk and V. L. Makarov and N. A. Rossokhata and V. K. Rossokhaty},
     title = {Analysis of structures based on graded semiconductor compound},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {63--81},
     year = {1998},
     volume = {10},
     number = {11},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1998_10_11_a5/}
}
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I. P. Gavriljuk; V. L. Makarov; N. A. Rossokhata; V. K. Rossokhaty. Analysis of structures based on graded semiconductor compound. Matematičeskoe modelirovanie, Tome 10 (1998) no. 11, pp. 63-81. http://geodesic.mathdoc.fr/item/MM_1998_10_11_a5/