Geodesic
Field emission from silicon
Matematičeskoe modelirovanie, Tome 9 (1997) no. 9, pp. 75-82 Cet article a éte moissonné depuis la source Math-Net.Ru

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Physical and mathematical model for numerical simulation of field emission from silicon is developed taking into account the nonhomogeneous electron heating. Effective discrete scheme and algorithm are realized in the framework of quasi-hydrodynamic approach to solve the problem of electron transport with complex integral non-linear boundary conditions. Field emission cathode characteristics are calculated and discussed in connection with application to analysis of vacuum microelectronics devices. 
@article{MM_1997_9_9_a5,
     author = {V. A. Fedirko and V. A. Nikolaeva},
     title = {Field emission from silicon},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {75--82},
     year = {1997},
     volume = {9},
     number = {9},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1997_9_9_a5/}
}
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V. A. Fedirko; V. A. Nikolaeva. Field emission from silicon. Matematičeskoe modelirovanie, Tome 9 (1997) no. 9, pp. 75-82. http://geodesic.mathdoc.fr/item/MM_1997_9_9_a5/