Investigation of silicon wafer defects by discrete sources method
Matematičeskoe modelirovanie, Tome 9 (1997) no. 8, pp. 110-118.

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In this paper we investigate the light scattering by silicon wafer defect on the base of Discrete Sources Method. The problem of construction and realization of numerical sheme is examined. Some examples of comparative analysis of the scatterig properties for particle and pit at the interface are given.
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     author = {Yu. A. Eremin and N. V. Orlov and A. G. Sveshnikov},
     title = {Investigation of silicon wafer defects by discrete sources method},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {110--118},
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     number = {8},
     year = {1997},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1997_9_8_a10/}
}
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Yu. A. Eremin; N. V. Orlov; A. G. Sveshnikov. Investigation of silicon wafer defects by discrete sources method. Matematičeskoe modelirovanie, Tome 9 (1997) no. 8, pp. 110-118. http://geodesic.mathdoc.fr/item/MM_1997_9_8_a10/