Geodesic
Investigation of silicon wafer defects by discrete sources method
Matematičeskoe modelirovanie, Tome 9 (1997) no. 8, pp. 110-118 Cet article a éte moissonné depuis la source Math-Net.Ru

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In this paper we investigate the light scattering by silicon wafer defect on the base of Discrete Sources Method. The problem of construction and realization of numerical sheme is examined. Some examples of comparative analysis of the scatterig properties for particle and pit at the interface are given. 
@article{MM_1997_9_8_a10,
     author = {Yu. A. Eremin and N. V. Orlov and A. G. Sveshnikov},
     title = {Investigation of silicon wafer defects by discrete sources method},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {110--118},
     year = {1997},
     volume = {9},
     number = {8},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1997_9_8_a10/}
}
TY  - JOUR
AU  - Yu. A. Eremin
AU  - N. V. Orlov
AU  - A. G. Sveshnikov
TI  - Investigation of silicon wafer defects by discrete sources method
JO  - Matematičeskoe modelirovanie
PY  - 1997
SP  - 110
EP  - 118
VL  - 9
IS  - 8
UR  - http://geodesic.mathdoc.fr/item/MM_1997_9_8_a10/
LA  - ru
ID  - MM_1997_9_8_a10
ER  - 
%0 Journal Article
%A Yu. A. Eremin
%A N. V. Orlov
%A A. G. Sveshnikov
%T Investigation of silicon wafer defects by discrete sources method
%J Matematičeskoe modelirovanie
%D 1997
%P 110-118
%V 9
%N 8
%U http://geodesic.mathdoc.fr/item/MM_1997_9_8_a10/
%G ru
%F MM_1997_9_8_a10
Yu. A. Eremin; N. V. Orlov; A. G. Sveshnikov. Investigation of silicon wafer defects by discrete sources method. Matematičeskoe modelirovanie, Tome 9 (1997) no. 8, pp. 110-118. http://geodesic.mathdoc.fr/item/MM_1997_9_8_a10/