Geodesic
Simulation of impurity diffusion during thermal annealing in the polysilicon-silicon system
Matematičeskoe modelirovanie, Tome 9 (1997) no. 5, pp. 68-76 Cet article a éte moissonné depuis la source Math-Net.Ru

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A model for the transfer of the impurity atoms in the polysilicon-silicon system is proposed. The model describes impurity segregation phenomena and takes into account nonhomogeneity of distribution of point defects near interface of the phases. Numerical algorithm for quasilinear diffusion equations solving is constructed. Numerical computations for coupled arsenic and boron diffusion are carried out. 
@article{MM_1997_9_5_a6,
     author = {O. I. Velichko and F. F. Komarov and N. M. Lukanov and A. N. Muchynski and N. L. Prohorenko and V. A. Tsurko},
     title = {Simulation of impurity diffusion during thermal annealing in the polysilicon-silicon system},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {68--76},
     year = {1997},
     volume = {9},
     number = {5},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1997_9_5_a6/}
}
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O. I. Velichko; F. F. Komarov; N. M. Lukanov; A. N. Muchynski; N. L. Prohorenko; V. A. Tsurko. Simulation of impurity diffusion during thermal annealing in the polysilicon-silicon system. Matematičeskoe modelirovanie, Tome 9 (1997) no. 5, pp. 68-76. http://geodesic.mathdoc.fr/item/MM_1997_9_5_a6/