Numerical investigation of the hydrodynamic model equations of charge transport in semiconductors
Matematičeskoe modelirovanie, Tome 9 (1997) no. 3, pp. 40-50.

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The article is devoted to numerical investigation of the hydrodynamic model describing the movement of charge in semiconductor devices. The mathematical model from [1] is taken as a basis of investigation. This hydrodynamic model is investigated within the framework of the ballistic diode problem (see [2], [3]). Finding the stationary solutions of the ballistic diode problem is carried out by the establishment method.
@article{MM_1997_9_3_a3,
     author = {A. M. Blokhin and D. A. Krymskikh},
     title = {Numerical investigation of the hydrodynamic model equations of charge transport in semiconductors},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {40--50},
     publisher = {mathdoc},
     volume = {9},
     number = {3},
     year = {1997},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1997_9_3_a3/}
}
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A. M. Blokhin; D. A. Krymskikh. Numerical investigation of the hydrodynamic model equations of charge transport in semiconductors. Matematičeskoe modelirovanie, Tome 9 (1997) no. 3, pp. 40-50. http://geodesic.mathdoc.fr/item/MM_1997_9_3_a3/