Geodesic
Numerical simulation of Ga~atoms migration in molecular-beam epitaxy of~GaAs
Matematičeskoe modelirovanie, Tome 7 (1995) no. 3, pp. 19-28.

Voir la notice de l'article provenant de la source Math-Net.Ru

The results of computational experiments with stochastic model of molecular-beam epitaxial growth of the GaAs crystal are presented. In these experiments the growth of GaAs on flat and vicinal (001) surfaces at various molecular flux densitis and substrate temperatures is simulated by Monte-Carlo method. The quantitative characteristics of Ga atoms migration such as free path length, migration time, diffusion coefficient, and the characteristics of crystal such as As surface concentration, surface roughness, bulk vacancy concentration are determined in the simulations. The resuits of simulation demonstrate the dependency of migration upon growth conditions and the influence of migration on crystal quality. 
@article{MM_1995_7_3_a1,
     author = {N. V. Peskov},
     title = {Numerical simulation of {Ga~atoms} migration in molecular-beam epitaxy {of~GaAs}},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {19--28},
     publisher = {mathdoc},
     volume = {7},
     number = {3},
     year = {1995},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1995_7_3_a1/}
}
TY  - JOUR
AU  - N. V. Peskov
TI  - Numerical simulation of Ga~atoms migration in molecular-beam epitaxy of~GaAs
JO  - Matematičeskoe modelirovanie
PY  - 1995
SP  - 19
EP  - 28
VL  - 7
IS  - 3
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/MM_1995_7_3_a1/
LA  - ru
ID  - MM_1995_7_3_a1
ER  - 
%0 Journal Article
%A N. V. Peskov
%T Numerical simulation of Ga~atoms migration in molecular-beam epitaxy of~GaAs
%J Matematičeskoe modelirovanie
%D 1995
%P 19-28
%V 7
%N 3
%I mathdoc
%U http://geodesic.mathdoc.fr/item/MM_1995_7_3_a1/
%G ru
%F MM_1995_7_3_a1
N. V. Peskov. Numerical simulation of Ga~atoms migration in molecular-beam epitaxy of~GaAs. Matematičeskoe modelirovanie, Tome 7 (1995) no. 3, pp. 19-28. http://geodesic.mathdoc.fr/item/MM_1995_7_3_a1/