Geodesic
The numerical simulation of a depletion-layer capacity in semiconductor device structures
Matematičeskoe modelirovanie, Tome 6 (1994) no. 5, pp. 15-20 Cet article a éte moissonné depuis la source Math-Net.Ru

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The determination method of depletion-layer capacity based on calculation of field strength in p-n junction neighbourhood is proposed. 
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     author = {V. A. Zhuk and V. D. Kurjazov and V. A. Tsurko},
     title = {The numerical simulation of a~depletion-layer capacity in semiconductor device structures},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {15--20},
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     volume = {6},
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     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1994_6_5_a1/}
}
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V. A. Zhuk; V. D. Kurjazov; V. A. Tsurko. The numerical simulation of a depletion-layer capacity in semiconductor device structures. Matematičeskoe modelirovanie, Tome 6 (1994) no. 5, pp. 15-20. http://geodesic.mathdoc.fr/item/MM_1994_6_5_a1/