Geodesic
Modelling of the kinetics of gas-phase reactions during silicon precipitation
Matematičeskoe modelirovanie, Tome 4 (1992) no. 2, pp. 15-20.

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A scheme of gas-phase reactions of the silane decomposition is' suggested. The kinetics of the silane decomposition and the reaption products accumulation is computed. The results show that the charged particles (ions and ions-radicals) do not actually influence on the silane rate decomposition and the composition of products. In the main, the silane decomposition proceeds via the radical mechanism where the principal role belongs to $\mathrm{SiH}_3$ and $\mathrm{SiH}_2$ radicals. 
@article{MM_1992_4_2_a1,
     author = {A. F. Stekolnikov and O. M. Ivanov and A. E. Pereversev and D. V. Feschenko},
     title = {Modelling of the kinetics of gas-phase reactions during silicon precipitation},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {15--20},
     publisher = {mathdoc},
     volume = {4},
     number = {2},
     year = {1992},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1992_4_2_a1/}
}
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A. F. Stekolnikov; O. M. Ivanov; A. E. Pereversev; D. V. Feschenko. Modelling of the kinetics of gas-phase reactions during silicon precipitation. Matematičeskoe modelirovanie, Tome 4 (1992) no. 2, pp. 15-20. http://geodesic.mathdoc.fr/item/MM_1992_4_2_a1/