Geodesic
The model of MBE growth of nonideal III--V compound crystal
Matematičeskoe modelirovanie, Tome 4 (1992) no. 11, pp. 101-109.

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The computer model of MBE growth of III–V semiconductor compounds is described. The model, in contrast with a traditional model “solid-on solid”, allows the creation of bulk vacancies. The results of computational experiment on growth of crystal at low temperature for different values of flux intensity of group V elements are presented. 
@article{MM_1992_4_11_a5,
     author = {N. V. Peskov},
     title = {The model of {MBE} growth of nonideal {III--V} compound crystal},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {101--109},
     publisher = {mathdoc},
     volume = {4},
     number = {11},
     year = {1992},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1992_4_11_a5/}
}
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N. V. Peskov. The model of MBE growth of nonideal III--V compound crystal. Matematičeskoe modelirovanie, Tome 4 (1992) no. 11, pp. 101-109. http://geodesic.mathdoc.fr/item/MM_1992_4_11_a5/