Geodesic
1-D Model of diffusion in polysilicon-silicon interface
Matematičeskoe modelirovanie, Tome 2 (1990) no. 8, pp. 60-69.

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The model of impurity diffusion in poly silicon layer is considered. The model equations, which takes into account the grain growth, the segregation of impurity to the grain boundaries as well as impurity pile-up at the poly silicon-silicon interface, are derived. The comparison of some simulated results with experimental ones is considered. 
@article{MM_1990_2_8_a6,
     author = {A. D. Sadovnikov and A. V. Chernyaev},
     title = {1-D {Model} of diffusion in polysilicon-silicon interface},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {60--69},
     publisher = {mathdoc},
     volume = {2},
     number = {8},
     year = {1990},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_8_a6/}
}
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A. D. Sadovnikov; A. V. Chernyaev. 1-D Model of diffusion in polysilicon-silicon interface. Matematičeskoe modelirovanie, Tome 2 (1990) no. 8, pp. 60-69. http://geodesic.mathdoc.fr/item/MM_1990_2_8_a6/