Geodesic
1-D Model of diffusion in polysilicon-silicon interface
Matematičeskoe modelirovanie, Tome 2 (1990) no. 8, pp. 60-69 Cet article a éte moissonné depuis la source Math-Net.Ru

Voir la notice de l'article

The model of impurity diffusion in poly silicon layer is considered. The model equations, which takes into account the grain growth, the segregation of impurity to the grain boundaries as well as impurity pile-up at the poly silicon-silicon interface, are derived. The comparison of some simulated results with experimental ones is considered. 
@article{MM_1990_2_8_a6,
     author = {A. D. Sadovnikov and A. V. Chernyaev},
     title = {1-D {Model} of diffusion in polysilicon-silicon interface},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {60--69},
     year = {1990},
     volume = {2},
     number = {8},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_8_a6/}
}
TY  - JOUR
AU  - A. D. Sadovnikov
AU  - A. V. Chernyaev
TI  - 1-D Model of diffusion in polysilicon-silicon interface
JO  - Matematičeskoe modelirovanie
PY  - 1990
SP  - 60
EP  - 69
VL  - 2
IS  - 8
UR  - http://geodesic.mathdoc.fr/item/MM_1990_2_8_a6/
LA  - ru
ID  - MM_1990_2_8_a6
ER  - 
%0 Journal Article
%A A. D. Sadovnikov
%A A. V. Chernyaev
%T 1-D Model of diffusion in polysilicon-silicon interface
%J Matematičeskoe modelirovanie
%D 1990
%P 60-69
%V 2
%N 8
%U http://geodesic.mathdoc.fr/item/MM_1990_2_8_a6/
%G ru
%F MM_1990_2_8_a6
A. D. Sadovnikov; A. V. Chernyaev. 1-D Model of diffusion in polysilicon-silicon interface. Matematičeskoe modelirovanie, Tome 2 (1990) no. 8, pp. 60-69. http://geodesic.mathdoc.fr/item/MM_1990_2_8_a6/