Geodesic
A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy
Matematičeskoe modelirovanie, Tome 2 (1990) no. 7, pp. 116-128 Cet article a éte moissonné depuis la source Math-Net.Ru

Voir la notice de l'article

A statistical model of molecular-beam epitaxial growth of GaAs is described. The model involves the processes of adsorption, migration, desorption of gallium, and dissociative adsorption, migration, associative desorption of arsenic. The Monte Carlo algorithm is described. The results of simulations are presented. 
@article{MM_1990_2_7_a9,
     author = {N. V. Peskov},
     title = {A~model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {116--128},
     year = {1990},
     volume = {2},
     number = {7},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_7_a9/}
}
TY  - JOUR
AU  - N. V. Peskov
TI  - A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy
JO  - Matematičeskoe modelirovanie
PY  - 1990
SP  - 116
EP  - 128
VL  - 2
IS  - 7
UR  - http://geodesic.mathdoc.fr/item/MM_1990_2_7_a9/
LA  - ru
ID  - MM_1990_2_7_a9
ER  - 
%0 Journal Article
%A N. V. Peskov
%T A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy
%J Matematičeskoe modelirovanie
%D 1990
%P 116-128
%V 2
%N 7
%U http://geodesic.mathdoc.fr/item/MM_1990_2_7_a9/
%G ru
%F MM_1990_2_7_a9
N. V. Peskov. A model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy. Matematičeskoe modelirovanie, Tome 2 (1990) no. 7, pp. 116-128. http://geodesic.mathdoc.fr/item/MM_1990_2_7_a9/