Geodesic
A~model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy
Matematičeskoe modelirovanie, Tome 2 (1990) no. 7, pp. 116-128.

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A statistical model of molecular-beam epitaxial growth of GaAs is described. The model involves the processes of adsorption, migration, desorption of gallium, and dissociative adsorption, migration, associative desorption of arsenic. The Monte Carlo algorithm is described. The results of simulations are presented. 
@article{MM_1990_2_7_a9,
     author = {N. V. Peskov},
     title = {A~model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {116--128},
     publisher = {mathdoc},
     volume = {2},
     number = {7},
     year = {1990},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_7_a9/}
}
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N. V. Peskov. A~model of $\mathrm{GaAs}$ growth in molecular-beam epitaxy. Matematičeskoe modelirovanie, Tome 2 (1990) no. 7, pp. 116-128. http://geodesic.mathdoc.fr/item/MM_1990_2_7_a9/