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3-D modelling of transient processes in elements of integrated circuits
Matematičeskoe modelirovanie, Tome 2 (1990) no. 7, pp. 28-37 Cet article a éte moissonné depuis la source Math-Net.Ru

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Half-implicit absolutely stable method for calculation of transient processes in elements of integrated circuits in threedimensional geometry is proposed. Modelling of transient processes in bipolar transistor was performed and comparison of 2-D and 3-D results was made. 
@article{MM_1990_2_7_a2,
     author = {A. I. Adamsone and B. S. Polskii},
     title = {3-D modelling of transient processes in elements of integrated circuits},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {28--37},
     year = {1990},
     volume = {2},
     number = {7},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_7_a2/}
}
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A. I. Adamsone; B. S. Polskii. 3-D modelling of transient processes in elements of integrated circuits. Matematičeskoe modelirovanie, Tome 2 (1990) no. 7, pp. 28-37. http://geodesic.mathdoc.fr/item/MM_1990_2_7_a2/