Geodesic
Numerical investigation of the process of charge carrier transport in a semiconductor phototransformator
Matematičeskoe modelirovanie, Tome 2 (1990) no. 3, pp. 23-30 Cet article a éte moissonné depuis la source Math-Net.Ru

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Numerical analysis of one-dimensional steady-state distribution of charge carriers and an electrical potential in the semiconductor structure $n^+-p-p^+$ subjected to the light excitation is given. Uoltage current characteristics are obtained for different levels of light excitation and various distributions for both the charge and the potential are shown. Nonlinear relation of the power growth which is gathered from phototransformator in dependence of the velocity of light excitation of the charge carries is obtained. An optimum regime of light excitation is determined. 
@article{MM_1990_2_3_a2,
     author = {M. S. Epifanov and A. V. Shipilin and V. N. Shlenskii},
     title = {Numerical investigation of the process of charge carrier transport in a~semiconductor phototransformator},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {23--30},
     year = {1990},
     volume = {2},
     number = {3},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_3_a2/}
}
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M. S. Epifanov; A. V. Shipilin; V. N. Shlenskii. Numerical investigation of the process of charge carrier transport in a semiconductor phototransformator. Matematičeskoe modelirovanie, Tome 2 (1990) no. 3, pp. 23-30. http://geodesic.mathdoc.fr/item/MM_1990_2_3_a2/