Geodesic
Simulation of nonsteady state carrier transport in baritt diode
Matematičeskoe modelirovanie, Tome 2 (1990) no. 11, pp. 3-9
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The numerical simulation of BARITT diode has been carried out by using quasihydrodynamical approximation. AC characteristics were calculated in nonlinear case. Power and efficiency limitations were determined as function of size and doping profile of semiconductor structure. 
@article{MM_1990_2_11_a0,
     author = {G. P. Pavlov},
     title = {Simulation of nonsteady state carrier transport in baritt diode},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {3--9},
     year = {1990},
     volume = {2},
     number = {11},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_11_a0/}
}
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G. P. Pavlov. Simulation of nonsteady state carrier transport in baritt diode. Matematičeskoe modelirovanie, Tome 2 (1990) no. 11, pp. 3-9. http://geodesic.mathdoc.fr/item/MM_1990_2_11_a0/