Geodesic
Numerical simulation submicron doped regions in semiconductor structures manufacturing
Matematičeskoe modelirovanie, Tome 2 (1990) no. 10, pp. 13-25 Cet article a éte moissonné depuis la source Math-Net.Ru

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Computational aspects of simulation of impurity redistribution during the thermal treatment of two-dimensional ion-implanted regions in silicon axe considered. The finite difference method is based on an adaptive grid, determinated by taking into account the character of impurity concentration evolution. The examples on hand of numerical modeling of active regions manufacturing for bipolar and MOS-transistors are given. 
@article{MM_1990_2_10_a1,
     author = {A. F. Burenkov and A. I. Kirkovski and V. A. Tsurko},
     title = {Numerical simulation submicron doped regions in semiconductor structures manufacturing},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {13--25},
     year = {1990},
     volume = {2},
     number = {10},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1990_2_10_a1/}
}
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A. F. Burenkov; A. I. Kirkovski; V. A. Tsurko. Numerical simulation submicron doped regions in semiconductor structures manufacturing. Matematičeskoe modelirovanie, Tome 2 (1990) no. 10, pp. 13-25. http://geodesic.mathdoc.fr/item/MM_1990_2_10_a1/