Geodesic
Modelling of semiconductor microstructures with account of impact ionization in strong electric fields
Matematičeskoe modelirovanie, Tome 1 (1989) no. 5, pp. 23-32.

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@article{MM_1989_1_5_a2,
     author = {S. A. Mayorov and A. M. Mel'nikov and A. A. Rudenko},
     title = {Modelling of semiconductor microstructures with account of impact ionization in strong electric fields},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {23--32},
     publisher = {mathdoc},
     volume = {1},
     number = {5},
     year = {1989},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1989_1_5_a2/}
}
TY  - JOUR
AU  - S. A. Mayorov
AU  - A. M. Mel'nikov
AU  - A. A. Rudenko
TI  - Modelling of semiconductor microstructures with account of impact ionization in strong electric fields
JO  - Matematičeskoe modelirovanie
PY  - 1989
SP  - 23
EP  - 32
VL  - 1
IS  - 5
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/MM_1989_1_5_a2/
LA  - ru
ID  - MM_1989_1_5_a2
ER  - 
%0 Journal Article
%A S. A. Mayorov
%A A. M. Mel'nikov
%A A. A. Rudenko
%T Modelling of semiconductor microstructures with account of impact ionization in strong electric fields
%J Matematičeskoe modelirovanie
%D 1989
%P 23-32
%V 1
%N 5
%I mathdoc
%U http://geodesic.mathdoc.fr/item/MM_1989_1_5_a2/
%G ru
%F MM_1989_1_5_a2
S. A. Mayorov; A. M. Mel'nikov; A. A. Rudenko. Modelling of semiconductor microstructures with account of impact ionization in strong electric fields. Matematičeskoe modelirovanie, Tome 1 (1989) no. 5, pp. 23-32. http://geodesic.mathdoc.fr/item/MM_1989_1_5_a2/