Geodesic
Strongly non-equilibrium electronic phenomena in sub-micron Si-MOS devices
Matematičeskoe modelirovanie, Tome 1 (1989) no. 3, pp. 61-74.

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@article{MM_1989_1_3_a3,
     author = {O. I. Kas'min and N. A. Bannov},
     title = {Strongly non-equilibrium electronic phenomena in sub-micron {Si-MOS} devices},
     journal = {Matemati\v{c}eskoe modelirovanie},
     pages = {61--74},
     publisher = {mathdoc},
     volume = {1},
     number = {3},
     year = {1989},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/MM_1989_1_3_a3/}
}
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O. I. Kas'min; N. A. Bannov. Strongly non-equilibrium electronic phenomena in sub-micron Si-MOS devices. Matematičeskoe modelirovanie, Tome 1 (1989) no. 3, pp. 61-74. http://geodesic.mathdoc.fr/item/MM_1989_1_3_a3/