On mechanism of Gross excitonic luminescence in semiconductor $\mathrm{A}_3\mathrm{B}_5$ doped with izovalentic impurities
Doklady Akademii Nauk, Tome 352 (1997) no. 4, pp. 470-471.

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@article{DAN_1997_352_4_a8,
     author = {P. Kh. Khabibullaev and S. Z. Zainabiddinov and S. A. Islamov and B. L. Oksengendler},
     title = {On mechanism of {Gross} excitonic luminescence in semiconductor $\mathrm{A}_3\mathrm{B}_5$ doped with izovalentic impurities},
     journal = {Doklady Akademii Nauk},
     pages = {470--471},
     publisher = {mathdoc},
     volume = {352},
     number = {4},
     year = {1997},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1997_352_4_a8/}
}
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P. Kh. Khabibullaev; S. Z. Zainabiddinov; S. A. Islamov; B. L. Oksengendler. On mechanism of Gross excitonic luminescence in semiconductor $\mathrm{A}_3\mathrm{B}_5$ doped with izovalentic impurities. Doklady Akademii Nauk, Tome 352 (1997) no. 4, pp. 470-471. http://geodesic.mathdoc.fr/item/DAN_1997_352_4_a8/