Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating
Doklady Akademii Nauk, Tome 300 (1988) no. 1, pp. 84-88.

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     author = {A. V. Latyshev and A. L. Aseev and A. B. Krasil'nikov and A. V. Rzhanov and S. I. Stenin},
     title = {Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating},
     journal = {Doklady Akademii Nauk},
     pages = {84--88},
     publisher = {mathdoc},
     volume = {300},
     number = {1},
     year = {1988},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1988_300_1_a19/}
}
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A. V. Latyshev; A. L. Aseev; A. B. Krasil'nikov; A. V. Rzhanov; S. I. Stenin. Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating. Doklady Akademii Nauk, Tome 300 (1988) no. 1, pp. 84-88. http://geodesic.mathdoc.fr/item/DAN_1988_300_1_a19/