Surface micro roughness influence on the induced absorption value in $\mathrm{Si}$ and $\mathrm{GaAs}$ at picosecond excitation
Doklady Akademii Nauk, Tome 296 (1987) no. 5, pp. 1098-1100.

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@article{DAN_1987_296_5_a16,
     author = {A. A. Bugaev and B. P. Zakharchenya and Yu. B. Kiselev and V. A. Lukoshkin},
     title = {Surface micro roughness influence on the induced absorption value in $\mathrm{Si}$ and $\mathrm{GaAs}$ at picosecond excitation},
     journal = {Doklady Akademii Nauk},
     pages = {1098--1100},
     publisher = {mathdoc},
     volume = {296},
     number = {5},
     year = {1987},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1987_296_5_a16/}
}
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A. A. Bugaev; B. P. Zakharchenya; Yu. B. Kiselev; V. A. Lukoshkin. Surface micro roughness influence on the induced absorption value in $\mathrm{Si}$ and $\mathrm{GaAs}$ at picosecond excitation. Doklady Akademii Nauk, Tome 296 (1987) no. 5, pp. 1098-1100. http://geodesic.mathdoc.fr/item/DAN_1987_296_5_a16/