Inelastic relaxation in silicon doped with palladium and iridium
Doklady Akademii Nauk, Tome 272 (1983) no. 4, pp. 849-851
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@article{DAN_1983_272_4_a20,
author = {P. Kh. Khabibullaev and M. S. Yunusov and N. S. Tulyaganova},
title = {Inelastic relaxation in silicon doped with palladium and iridium},
journal = {Doklady Akademii Nauk},
pages = {849--851},
year = {1983},
volume = {272},
number = {4},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1983_272_4_a20/}
}
TY - JOUR AU - P. Kh. Khabibullaev AU - M. S. Yunusov AU - N. S. Tulyaganova TI - Inelastic relaxation in silicon doped with palladium and iridium JO - Doklady Akademii Nauk PY - 1983 SP - 849 EP - 851 VL - 272 IS - 4 UR - http://geodesic.mathdoc.fr/item/DAN_1983_272_4_a20/ LA - ru ID - DAN_1983_272_4_a20 ER -
P. Kh. Khabibullaev; M. S. Yunusov; N. S. Tulyaganova. Inelastic relaxation in silicon doped with palladium and iridium. Doklady Akademii Nauk, Tome 272 (1983) no. 4, pp. 849-851. http://geodesic.mathdoc.fr/item/DAN_1983_272_4_a20/