Geodesic
Tunneling in the system $\mathrm{GaAs}$–$\mathrm{V}$ and $\mathrm{GaAs}$–$\mathrm{V}_3\mathrm{Si}$
Doklady Akademii Nauk, Tome 261 (1981) no. 2, pp. 346-347 Cet article a éte moissonné depuis la source Math-Net.Ru

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@article{DAN_1981_261_2_a21,
     author = {V. Yu. Fedotov and E. M. Savitskii},
     title = {Tunneling in the system $\mathrm{GaAs}${\textendash}$\mathrm{V}$ and $\mathrm{GaAs}${\textendash}$\mathrm{V}_3\mathrm{Si}$},
     journal = {Doklady Akademii Nauk},
     pages = {346--347},
     year = {1981},
     volume = {261},
     number = {2},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1981_261_2_a21/}
}
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V. Yu. Fedotov; E. M. Savitskii. Tunneling in the system $\mathrm{GaAs}$–$\mathrm{V}$ and $\mathrm{GaAs}$–$\mathrm{V}_3\mathrm{Si}$. Doklady Akademii Nauk, Tome 261 (1981) no. 2, pp. 346-347. http://geodesic.mathdoc.fr/item/DAN_1981_261_2_a21/