Tunneling in the system $\mathrm{GaAs}$--$\mathrm{V}$ and $\mathrm{GaAs}$--$\mathrm{V}_3\mathrm{Si}$
Doklady Akademii Nauk, Tome 261 (1981) no. 2, pp. 346-347.

Voir la notice de l'article provenant de la source Math-Net.Ru

@article{DAN_1981_261_2_a21,
     author = {V. Yu. Fedotov and E. M. Savitskii},
     title = {Tunneling in the system $\mathrm{GaAs}$--$\mathrm{V}$ and $\mathrm{GaAs}$--$\mathrm{V}_3\mathrm{Si}$},
     journal = {Doklady Akademii Nauk},
     pages = {346--347},
     publisher = {mathdoc},
     volume = {261},
     number = {2},
     year = {1981},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1981_261_2_a21/}
}
TY  - JOUR
AU  - V. Yu. Fedotov
AU  - E. M. Savitskii
TI  - Tunneling in the system $\mathrm{GaAs}$--$\mathrm{V}$ and $\mathrm{GaAs}$--$\mathrm{V}_3\mathrm{Si}$
JO  - Doklady Akademii Nauk
PY  - 1981
SP  - 346
EP  - 347
VL  - 261
IS  - 2
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/DAN_1981_261_2_a21/
LA  - ru
ID  - DAN_1981_261_2_a21
ER  - 
%0 Journal Article
%A V. Yu. Fedotov
%A E. M. Savitskii
%T Tunneling in the system $\mathrm{GaAs}$--$\mathrm{V}$ and $\mathrm{GaAs}$--$\mathrm{V}_3\mathrm{Si}$
%J Doklady Akademii Nauk
%D 1981
%P 346-347
%V 261
%N 2
%I mathdoc
%U http://geodesic.mathdoc.fr/item/DAN_1981_261_2_a21/
%G ru
%F DAN_1981_261_2_a21
V. Yu. Fedotov; E. M. Savitskii. Tunneling in the system $\mathrm{GaAs}$--$\mathrm{V}$ and $\mathrm{GaAs}$--$\mathrm{V}_3\mathrm{Si}$. Doklady Akademii Nauk, Tome 261 (1981) no. 2, pp. 346-347. http://geodesic.mathdoc.fr/item/DAN_1981_261_2_a21/