Geodesic

Volume 258 (1981) no. 5

Sommaire

On a difference method of solving a problem of Tricomi type for equations of mixed type
p. 1033-1036
Any topological group is a factor group of a zero-dimensional topological group
p. 1037-1040
Solution of the van der Waerden problem for permanents
p. 1041-1044
Asymptotics of the eigenvalues for some elliptic operators acting in bundles over a manifold with a boundary
p. 1045-1046
On the recognition of an automaton relative to a locally generated class
p. 1047-1049
On relations of trajectory lengths in combinatorial choice problems
p. 1049-1052
On $L_1$-convergence of statistical kernel estimators of distribution densities
p. 1052-1055
Isomorphisms and elementary properties of nilpotent powered groups
p. 1056-1059
On an extension of the concept of $H$-convexity
p. 1059-1062
On multipliers of Fourier integrals
p. 1063-1065
Baer ordered $*$-algebras
p. 1065-1069
Extent of the feedback topology on the basis of regulation by deviation principle
p. 1070-1074
On the effect of convection in a saturated porous medium on the behavior of geothermal gradient in crust upper layers
p. 1075-1079
Evolution of geosystems and the geoatomism
p. 1079-1083
Nonsteady dissipative structures in nonlinear two-component media with three-dimensional sources
p. 1084-1088
Diffraction losses in open resonators. A geometric approach
p. 1089-1092
On the representation of difference schemes of mathematical physics in operator form
p. 1092-1096
Application of the Gaussian beam summation method for the computation of wave fields in the high-frequency approximation
p. 1097-1100
Functional of the kinetic energy of fermion one-dimensional system
p. 1100-1102
Diffusion of carbon in the different sorts of beryllium
p. 1103-1106
The theory of spherical drop evaporation at arbitrary Knudsen numbers
p. 1106-1110
Crystal structure of $\mathrm{K}_8\mathrm{Yb}_3[\mathrm{Si}_6\mathrm{O}_{16}]_2(\mathrm{OH})$. Polymorphism of radicals $[\mathrm{Si}_3\mathrm{O}_8]$
p. 1111-1115
Crystal Chemical prerequisites for improvement of homogeneity in semiconductor
p. 1115-1117