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Pinch effect in semiconductors under conditions of highly degenerated electron-hole plasma
Doklady Akademii Nauk, Tome 190 (1970) no. 3, pp. 555-557 Cet article a éte moissonné depuis la source Math-Net.Ru

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@article{DAN_1970_190_3_a17,
     author = {I. I. Boiko},
     title = {Pinch effect in semiconductors under conditions of highly degenerated electron-hole plasma},
     journal = {Doklady Akademii Nauk},
     pages = {555--557},
     year = {1970},
     volume = {190},
     number = {3},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1970_190_3_a17/}
}
TY  - JOUR
AU  - I. I. Boiko
TI  - Pinch effect in semiconductors under conditions of highly degenerated electron-hole plasma
JO  - Doklady Akademii Nauk
PY  - 1970
SP  - 555
EP  - 557
VL  - 190
IS  - 3
UR  - http://geodesic.mathdoc.fr/item/DAN_1970_190_3_a17/
LA  - ru
ID  - DAN_1970_190_3_a17
ER  - 
%0 Journal Article
%A I. I. Boiko
%T Pinch effect in semiconductors under conditions of highly degenerated electron-hole plasma
%J Doklady Akademii Nauk
%D 1970
%P 555-557
%V 190
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1970_190_3_a17/
%G ru
%F DAN_1970_190_3_a17
I. I. Boiko. Pinch effect in semiconductors under conditions of highly degenerated electron-hole plasma. Doklady Akademii Nauk, Tome 190 (1970) no. 3, pp. 555-557. http://geodesic.mathdoc.fr/item/DAN_1970_190_3_a17/