Geodesic
On a Shockley--Read--Hall model for semiconductors
Theoretical and applied mechanics, Tome 40 (2013) no. 1, p. 65 .

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The Shockley--Read--Hall model was introduced in 1952 to describe the statistics of recombination of holes and electrons in semiconductors occurring through the mechanism of trapping and we consider initial-boundary value problems with initial conditions.
DOI : 10.2298/TAM1301065K
Classification : 35A05 35B30
Keywords: partial differential equations, initial-boundary value problems 
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Julka Knežević-Miljanović. On a Shockley--Read--Hall model for semiconductors. Theoretical and applied mechanics, Tome 40 (2013) no. 1, p. 65 . doi : 10.2298/TAM1301065K. http://geodesic.mathdoc.fr/articles/10.2298/TAM1301065K/

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