On a Shockley--Read--Hall model for semiconductors
Theoretical and applied mechanics, Tome 40 (2013) no. 1, p. 65
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The Shockley--Read--Hall model was introduced in 1952 to describe the statistics of recombination of holes and electrons in semiconductors occurring through the mechanism of trapping and we consider initial-boundary value problems with initial conditions.
Classification :
35A05 35B30
Keywords: partial differential equations, initial-boundary value problems
Keywords: partial differential equations, initial-boundary value problems
@article{10_2298_TAM1301065K,
author = {Julka Kne\v{z}evi\'c-Miljanovi\'c},
title = {On a {Shockley--Read--Hall} model for semiconductors},
journal = {Theoretical and applied mechanics},
pages = {65 },
year = {2013},
volume = {40},
number = {1},
doi = {10.2298/TAM1301065K},
language = {en},
url = {http://geodesic.mathdoc.fr/articles/10.2298/TAM1301065K/}
}
Julka Knežević-Miljanović. On a Shockley--Read--Hall model for semiconductors. Theoretical and applied mechanics, Tome 40 (2013) no. 1, p. 65 . doi: 10.2298/TAM1301065K
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