Geodesic
Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices
Ch. Auer1 ; A. Majorana2 ; F. Schürrer1
1Institute of Theoretical and Computational Physics, Graz University of Technology, Graz, Austria; &
2Dipartimento di Matematica e Informatica, Università di Catania, Catania, Italy;
ESAIM. Proceedings, Tome 15 (2005), pp. 75-86
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In this paper we present a new way of discretizing the Boltzmann-Poisson system describing the electron transport in semiconductor devices. The new method is based on a cell average technique for the momentum space combined with a non-uniform discretization in real space. Results of the simulation of a 2D silicon MOSFET are shown and compared with Monte Carlo data. We found that the proposed scheme reduces both the number of grid points and the CPU time, without loss of accuracy.
DOI : 10.1051/proc:2005023

Ch. Auer  1   ; A. Majorana  2   ; F. Schürrer  1

1 Institute of Theoretical and Computational Physics, Graz University of Technology, Graz, Austria; &
2 Dipartimento di Matematica e Informatica, Università di Catania, Catania, Italy; 
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     title = {Numerical schemes for solving the non-stationary {Boltzmann-Poisson} system for two-dimensional semiconductor devices},
     journal = {ESAIM. Proceedings},
     pages = {75--86},
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     doi = {10.1051/proc:2005023},
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Ch. Auer; A. Majorana; F. Schürrer. Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices. ESAIM. Proceedings, Tome 15 (2005), pp. 75-86. doi: 10.1051/proc:2005023

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