Numerical study of the systematic error in Monte Carlo schemes for semiconductors
ESAIM: Mathematical Modelling and Numerical Analysis , Special Issue on Probabilistic methods and their applications, Tome 44 (2010) no. 5, pp. 1049-1068

Voir la notice de l'article provenant de la source Numdam

The paper studies the convergence behavior of Monte Carlo schemes for semiconductors. A detailed analysis of the systematic error with respect to numerical parameters is performed. Different sources of systematic error are pointed out and illustrated in a spatially one-dimensional test case. The error with respect to the number of simulation particles occurs during the calculation of the internal electric field. The time step error, which is related to the splitting of transport and electric field calculations, vanishes sufficiently fast. The error due to the approximation of the trajectories of particles depends on the ODE solver used in the algorithm. It is negligible compared to the other sources of time step error, when a second order Runge-Kutta solver is used. The error related to the approximate scattering mechanism is the most significant source of error with respect to the time step.

DOI : 10.1051/m2an/2010051
Classification : 82D37, 65C05
Keywords: Boltzmann-Poisson equations, electronic devices, Monte Carlo simulations
@article{M2AN_2010__44_5_1049_0,
     author = {Muscato, Orazio and Wagner, Wolfgang and Di Stefano, Vincenza},
     title = {Numerical study of the systematic error in {Monte} {Carlo} schemes for semiconductors},
     journal = {ESAIM: Mathematical Modelling and Numerical Analysis },
     pages = {1049--1068},
     publisher = {EDP-Sciences},
     volume = {44},
     number = {5},
     year = {2010},
     doi = {10.1051/m2an/2010051},
     mrnumber = {2731402},
     zbl = {1198.82068},
     language = {en},
     url = {http://geodesic.mathdoc.fr/articles/10.1051/m2an/2010051/}
}
TY  - JOUR
AU  - Muscato, Orazio
AU  - Wagner, Wolfgang
AU  - Di Stefano, Vincenza
TI  - Numerical study of the systematic error in Monte Carlo schemes for semiconductors
JO  - ESAIM: Mathematical Modelling and Numerical Analysis 
PY  - 2010
SP  - 1049
EP  - 1068
VL  - 44
IS  - 5
PB  - EDP-Sciences
UR  - http://geodesic.mathdoc.fr/articles/10.1051/m2an/2010051/
DO  - 10.1051/m2an/2010051
LA  - en
ID  - M2AN_2010__44_5_1049_0
ER  - 
%0 Journal Article
%A Muscato, Orazio
%A Wagner, Wolfgang
%A Di Stefano, Vincenza
%T Numerical study of the systematic error in Monte Carlo schemes for semiconductors
%J ESAIM: Mathematical Modelling and Numerical Analysis 
%D 2010
%P 1049-1068
%V 44
%N 5
%I EDP-Sciences
%U http://geodesic.mathdoc.fr/articles/10.1051/m2an/2010051/
%R 10.1051/m2an/2010051
%G en
%F M2AN_2010__44_5_1049_0
Muscato, Orazio; Wagner, Wolfgang; Di Stefano, Vincenza. Numerical study of the systematic error in Monte Carlo schemes for semiconductors. ESAIM: Mathematical Modelling and Numerical Analysis , Special Issue on Probabilistic methods and their applications, Tome 44 (2010) no. 5, pp. 1049-1068. doi: 10.1051/m2an/2010051

Cité par Sources :