Geodesic
Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices
Applications of Mathematics, Tome 46 (2001) no. 5, pp. 383-400 Cet article a éte moissonné depuis la source Czech Digital Mathematics Library

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The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
DOI : 10.1023/A:1013708427592
Classification : 35B35, 35B40, 35D05, 35F20, 35Q20, 82D37
Keywords: nonlinear boundary value problem; asymptotic behaviour of solutions; semiconductors; carrier transport; constant densities of ionized impurities; interior transition layer phenomena 
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     title = {Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices},
     journal = {Applications of Mathematics},
     pages = {383--400},
     year = {2001},
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Borevich, E. Z.; Chistyakov, V. M. Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices. Applications of Mathematics, Tome 46 (2001) no. 5, pp. 383-400. doi: 10.1023/A:1013708427592

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