%0 Journal Article
%A V. M. Gusev
%A N. P. Busharov
%A K. D. Demakov
%A Yu. G. Kozlov
%T The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
%J Doklady Akademii Nauk
%D 1971
%P 319-322
%V 197
%N 2
%I mathdoc
%U http://geodesic.mathdoc.fr/item/DAN_1971_197_2_a19/
%G ru
%F DAN_1971_197_2_a19